In response to escalating climate crises and surging global energy demands, onsemi (Nasdaq: ON) has introduced its latest generation silicon carbide technology platform, EliteSiC M3e MOSFETs. This launch is a significant step in accelerating the global transition to electrification, aiming to reduce carbon emissions and enhance the use of renewable energy resources.

onsemi’s new EliteSiC M3e MOSFETs are engineered to significantly enhance the performance and reliability of electrical systems while reducing costs. These MOSFETs are crucial for a variety of applications, including electric vehicle powertrains, DC fast chargers, solar inverters, and energy storage solutions. They are also set to transform data centers by meeting the increasing energy demands required to power sustainable artificial intelligence engines.

Simon Keeton, Group President of the Power Solutions Group at onsemi, emphasized the critical role of these advancements: “The future of electrification is dependent on advanced power semiconductors. Today’s infrastructure cannot keep up with the world’s demands for more intelligence and electrified mobility without significant innovations in power. This is critical to achieving global electrification and stopping climate change. We are setting the pace for innovation, with plans to significantly increase power density in our silicon carbide technology roadmap through 2030 to be able to meet the growing demands for energy and enable the global transition to electrification.”

The EliteSiC M3e MOSFETs promise reduced conduction losses by 30% and turn-off losses by up to 50% compared to previous generations, making them a top choice for critical electrification applications. Additionally, their low specific on-resistance and short-circuit capability make them ideal for the traction inverter market, which dominates SiC volume.

Dr. Mrinal Das, Senior Director of Technical Marketing at onsemi’s Power Solutions Group, explained the significance of controlling the full production spectrum: “There is a huge technical interdependency between the materials, device, and package in silicon carbide. Having full ownership over these key aspects allows us to have control over the design and manufacturing process and bring new generations to market much faster.”

As global energy demands continue to grow, onsemi is at the forefront of delivering innovative solutions that address the need for increased power density and efficiency in semiconductors. With plans to release multiple additional generations through 2030, onsemi is not just participating in the market; it is leading it, applying decades of experience to push the boundaries of speed and innovation in power semiconductor engineering and manufacturing.

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